For a D-MOSFET when biased at VGS = 0 V having IDSS =30 mA and VGS (off) = -6V, the drain current is equal to ______.

This question was previously asked in
SSC JE Electrical 05 Jun 2024 Shift 3 Official Paper - 1
View all SSC JE EE Papers >
  1. 0 mA
  2. infinite
  3. 20 mA
  4. 30 mA

Answer (Detailed Solution Below)

Option 4 : 30 mA
Free
RRB JE CBT I Full Test - 23
14.2 K Users
100 Questions 100 Marks 90 Mins

Detailed Solution

Download Solution PDF

Concept of Drain Current in a D-MOSFET:

The drain current (ID) for a D-MOSFET can be calculated using the following formula:

ID = IDSS × (1 - VGS / VGS(off))2

Where,

  • ID = Drain current
  • IDSS = Drain current when VGS = 0 V
  • VGS = Gate-source voltage
  • VGS(off) = Gate-source cutoff voltage

Given Data:

  • IDSS = 30 mA
  • VGS(off) = -6 V
  • VGS = 0 V

Calculation:

Using the formula:

ID = IDSS × (1 - VGS / VGS(off))2

Substitute the given values:

ID = 30 mA × (1 - 0 V / -6 V)2

ID = 30 mA × (1 - 0)2

ID = 30 mA × 1

ID = 30 mA

Conclusion:

Hence, the drain current is equal to 30 mA.

Latest SSC JE EE Updates

Last updated on May 29, 2025

-> SSC JE Electrical 2025 Notification will be released on June 30 for the post of Junior Engineer Electrical/ Electrical & Mechanical.

-> Applicants can fill out the SSC JE application form 2025 for Electrical Engineering from June 30 to July 21.

-> SSC JE EE 2025 paper 1 exam will be conducted from October 27 to 31. 

-> Candidates with a degree/diploma in engineering are eligible for this post.

-> The selection process includes Paper I and Paper II online exams, followed by document verification.

-> Prepare for the exam using SSC JE EE Previous Year Papers.

Get Free Access Now
Hot Links: happy teen patti teen patti jodi teen patti club apk teen patti diya teen patti master 2025