Which of the following statements is related to IGBT?

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MPPGCL JE Electrical 28 April 2023 Shift 1 Official Paper

Answer 1

IGBT (Insulated Gate Bipolar Transistor)

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IGBT is a three-terminal device. The three terminals are Gate (G), Emitter (E), and Collector (C).
An Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device that combines the advantages of MOSFETs and BJTs.
Like a MOSFET, it has a high input impedance, which means it requires very little gate current to turn on.
Like a BJT, it has low conduction (on-state) power loss due to its low saturation voltage.
It has superior current conduction capability compared with the bipolar transistor.
It also has excellent forward and reverse blocking capabilities.

The main drawbacks are:

Switching speed is inferior to that of a Power MOSFET and superior to that of BJT.
The collector current tails due to the minority carrier causes the turnoff speed to be slow.
At the highest temperature, the maximum current rating goes down to 2/3 of the value.
There is a possibility of latch-up due to the internal PNPN thyristor structure.