Question
Download Solution PDFWhat is the thickness of the n - type semiconductor of p - n junction diode used for photovoltaic effect to generate solar energy?
This question was previously asked in
PGCIL DT Electrical 12 March 2022 (NR II) Official Paper
Answer (Detailed Solution Below)
Option 3 : Less than one micrometre
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Download Solution PDFThe correct answer is option 3):(Less than one micrometre)
Concept:
- A pn junction separates the electron and hole carriers in a solar cell to create a voltage and useful work.
- When light reaches the p-n junction, the light photons enter the junction, through a very thin p-type layer.
- The light energy, in the form of photons, supplies sufficient energy to the p-n junction to create a number of electron-hole pairs.
- The incident light breaks the thermal equilibrium condition of the junction. The free electrons in the depletion region can quickly come to the n-type side of the junction.
- In a practical solar cell, the top N layer is very thin and heavily doped; whereas the P layer is thick and lightly doped. This is to increase the performance of the cell.
- The thickness of the n - type semiconductor of p - n junction diode used for photovoltaic effect to generate solar energy is Less than one micrometre
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