What is the thickness of the n - type semiconductor of p - n junction diode used for photovoltaic effect to generate solar energy?

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  1. Less than one nanometre 
  2. Less than one millimetre
  3. Less than one micrometre
  4. Less than one picometre

Answer (Detailed Solution Below)

Option 3 : Less than one micrometre
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The correct answer is option 3):(Less than one micrometre)

Concept:

  • A pn junction separates the electron and hole carriers in a solar cell to create a voltage and useful work. 
  • When light reaches the p-n junction, the light photons enter the junction, through a very thin p-type layer.
  • The light energy, in the form of photons, supplies sufficient energy to the p-n junction to create a number of electron-hole pairs.
  • The incident light breaks the thermal equilibrium condition of the junction. The free electrons in the depletion region can quickly come to the n-type side of the junction.
  • In a practical solar cell, the top N layer is very thin and heavily doped; whereas the P layer is thick and lightly doped. This is to increase the performance of the cell. 
  • The thickness of the n - type semiconductor of p - n junction diode used for photovoltaic effect to generate solar energy is Less than one micrometre
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