Power dissipation is negligibly small in:

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BHEL Engineer Trainee Electrical 2019 Paper

Answer 1

Complementary Metal-oxide-semiconductor (CMOS) uses complementary & symmetrical pair of P-type & n-type MOSFETS.

F1 S.B Madhu 11.06.20 D 1

The two important characteristics of CMOS devices are high noise immunity and low power dissipation.
CMOS devices dissipate less power than NMOS devices because the CMOS dissipates power only when switching (“dynamic power), whereas N channel MOSFET dissipates power whenever the transistor is on because there is a current path from Vdd to Vss.
In a CMOS, only one MOSFET is switched on at a time. Thus, there is no path from voltage source to ground so that a current can flow. Current flows in a MOSFET only during switching.
Thus, compared to N-channel MOSFET has the advantage of lower drain current from the power supply, thereby causing less power dissipation.